cystech electronics corp. spec. no. : c057n3 issued date : 2017.01.09 revised date : page no. : 1/9 MTNK6N3 cystek product specification n-channel enhancement mode mosfet MTNK6N3 bv dss 60v 0.35a i d @v gs =10v, t a =25 c r ds(on) @v gs =10v, i d =500ma 0.9 (typ) r ds(on) @v gs =4.5v, i d =200ma 1.1 (typ) features ? esd protected gate , 2kv (hbm) ? easily designed drive circuits ? high speed switching ? low-voltage drive ? pb-free lead plating and halogen-free package ? easy to use in parallel symbol outline MTNK6N3 ordering information sot-23 d d g g gate s source d drain s s g device package shipping sot-23 3000 pcs / tape & reel MTNK6N3-0-t1-g (pb-free lead plating and halogen-free package) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pcs / tape & reel,7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c057n3 issued date : 2017.01.09 revised date : page no. : 2/9 MTNK6N3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v dss 60 gate-source voltage v gss 20 v continuous drain current @v gs =10v, t a =25 c 350 continuous drain current @v gs =10v, t a =70 c i d 280 pulsed drain current i dm 1400 *1 ma total power dissipation p d 300 *2 mw esd susceptibility v esd 2000 *3 v operating junction temperature range tj -55~+150 storage temperature range tstg -55~+150 c thermal characteristics parameter symbol value unit thermal resistance, junction to ambient r ja 416 *2 c/w note : *1. pulse width 300 s, duty cycle 2% *2. when the device is mounted on a glass epoxy board with area measuring 1 0.75 0.62 inch *3. human body model, 1.5k in series with 100pf electrical characteristics (ta=25c) symbol min. typ. max. unit test conditions static bv dss* 60 - - v gs =0v, i d =250 a v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a i gss - - 10 v gs =16v, v ds =0v - - 1 v ds =60v, v gs =0v i dss - - 5 a v ds =48v, v gs =0v, tj=55 c - 0.9 2 i d =500ma, v gs =10v r ds(on)* - 1.1 3 i d =200ma, v gs =4.5v g fs 200 520 - ms v ds =10v, i d =500ma dynamic c iss - 26 39 c oss - 12 18 c rss - 2 3 pf v ds =25v, v gs =0v, f=1mhz *t r - 3.6 5.4 *t d - 15 22.5 *t stg - 10 15 *t f - 17.8 26.7 ns v ds =30v, i d =0.2a, v gs =10v, r g =25 *qg - 1.52 2.28 *qgs - 0.38 0.57 *qgd - 0.12 0.18 nc v ds =30v, i d =0.1a, v gs =10v
cystech electronics corp. spec. no. : c057n3 issued date : 2017.01.09 revised date : page no. : 3/9 MTNK6N3 cystek product specification body diode *v sd - 0.87 1.2 v i s =0.3a *trr - 8.9 - ns *qrr - 3.3 - nc i f =1a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c057n3 issued date : 2017.01.09 revised date : page no. : 4/9 MTNK6N3 cystek product specification typical characteristics typical output characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 012345678910 vds, drain-source voltage(v) i d , drain current (a) 10v, 9v, 8v,7v,6v,5v v gs =2.5v 3v 3.5v 4v brekdown voltage vs junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 0.1 1 10 0.01 0.1 1 i d , drain current(a) r ds(on) , static drain-source on-state resistance() v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1.0 1.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 024681 0 drain-source on-state resistance vs junction tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =500ma r ds( on) @tj=25c:0.9 typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance() i d =500ma v gs =4.5v, i d =200ma r ds( on) @tj=25c :1.1 typ.
cystech electronics corp. spec. no. : c057n3 issued date : 2017.01.09 revised date : page no. : 5/9 MTNK6N3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 1 10 100 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 0.001 0.01 0.1 1 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10 v gate charge characteristics 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =0.1a v ds =30v maximum safe operating area 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) t a =25c, tj=150c v gs =10v, r ja =416c/w single pulse dc 100ms r dson limited 100 s 1ms 1s 10ms maximum drain current vs junction temperature 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =416c/w
cystech electronics corp. spec. no. : c057n3 issued date : 2017.01.09 revised date : page no. : 6/9 MTNK6N3 cystek product specification typical characteristics(cont.) typical transfer characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 0 5 10 15 20 25 30 35 40 45 50 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c r ja =416c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =416c/w
cystech electronics corp. spec. no. : c057n3 issued date : 2017.01.09 revised date : page no. : 7/9 MTNK6N3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c057n3 issued date : 2017.01.09 revised date : page no. : 8/9 MTNK6N3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds ? time(ts min to ts max ) time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. 6 minutes max. 8 minutes max. time 25 c to peak temperature note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c057n3 issued date : 2017.01.09 revised date : page no. : 9/9 MTNK6N3 cystek product specification sot-23 dimension marking: style : pin 1.gate 2.source 3.drain 3-lead sot-23 plastic surface mounted package cystek package code: n3 702 *:typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0032 0.0079 0.08 0.20 b 0.0472 0.0669 1.20 1.70 k 0. 0118 0.0266 0.30 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1161 2.10 2.95 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0000 0.0040 0.00 0.10 l1 0. 0118 0.0197 0.30 0.50 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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